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November These N-Channel enhancement mode power field effect. This advanced technology has. These devices are well suited for high effi-ciency switched. V DSS. V GSS. Drain-Source Voltage. Drain Current. Gate-Source Voltage. Single Pulsed Avalanche Energy. Avalanche Current. Repetitive Avalanche Energy. Note 1. Note 2. Note 3. Operating and Storage Temperature Range.
T L Maximum lead temperature for soldering,. Thermal Characteristics. Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ. Thermal Resistance, Junction-to-Ambient , Max. Package Marking and Ordering Information. Part Number. Top Mark. TO F. Packing Method. Reel Size.
Tape Width. Test Conditions. Min Typ Max Unit. Off Characteristics. BV DSS. I DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. Zero Gate Voltage Drain Current. I GSSF. I GSSR. Gate-Body Leakage Current, Forward. Gate-Body Leakage Current, Reverse. On Characteristics. V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Dynamic Characteristics.
C iss. C oss. C rss. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-On Rise Time. Turn-Off Delay Time. Turn-Off Fall Time. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Note 4. Q rr Reverse Recovery Charge. Repetitive rating: pulse-width limited by maximum junction temperature.
Essentially independent of operating temperature typical characteristics. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQPF10N60C MOSFET. Datasheet pdf. Equivalent
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