If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company. In that event, "Licensee" herein refers to such company. Delivery of Content. Licensee agrees that it has received a copy of the Content, including Software i.

Author:Faujin Tozahn
Language:English (Spanish)
Published (Last):18 March 2006
PDF File Size:18.38 Mb
ePub File Size:15.51 Mb
Price:Free* [*Free Regsitration Required]

November These N-Channel enhancement mode power field effect. This advanced technology has. These devices are well suited for high effi-ciency switched. V DSS. V GSS. Drain-Source Voltage. Drain Current. Gate-Source Voltage. Single Pulsed Avalanche Energy. Avalanche Current. Repetitive Avalanche Energy. Note 1. Note 2. Note 3. Operating and Storage Temperature Range.

T L Maximum lead temperature for soldering,. Thermal Characteristics. Thermal Resistance, Junction-to-Case , Max.

Thermal Resistance, Case-to-Sink , Typ. Thermal Resistance, Junction-to-Ambient , Max. Package Marking and Ordering Information. Part Number. Top Mark. TO F. Packing Method. Reel Size.

Tape Width. Test Conditions. Min Typ Max Unit. Off Characteristics. BV DSS. I DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. Zero Gate Voltage Drain Current. I GSSF. I GSSR. Gate-Body Leakage Current, Forward. Gate-Body Leakage Current, Reverse. On Characteristics. V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Dynamic Characteristics.

C iss. C oss. C rss. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-On Rise Time. Turn-Off Delay Time. Turn-Off Fall Time. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Note 4. Q rr Reverse Recovery Charge. Repetitive rating: pulse-width limited by maximum junction temperature.

Essentially independent of operating temperature typical characteristics. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.


FQPF10N60C MOSFET. Datasheet pdf. Equivalent




Related Articles